2N5551CN 데이터 시트보기 (PDF) - AUK -> KODENSHI CORP
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2N5551CN Datasheet PDF : 4 Pages
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Semiconductor
2N5551CN
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
Ordering Information
Type NO.
2N5551CN
Outline Dimensions
Marking
2N5551C
Package Code
TO-92N
unit : mm
4.20~4.40
2.25 Max.
0.52 Max.
0.90 Max.
1.27 Typ.
12 3
3.55 Typ
0.40 Max.
KSD-T0C061-000
PIN Connections
1. Emitter
2. Collector
3. Base
1
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