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2N5493

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2N5493

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 55V(Min)

·Low Saturation Voltage-

: VCE (sat)= 1V(Max)@IC= 2.5A

APPLICATIONS

·Designed for a wide variety of medium-power switching and

amplifier applications , such as series and shunt regulators

and driver and output stages of high-fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

75

VCEV

Collector-Emitter Voltage

VBE= -1.5V

75

VCER

Collector-Emitter Voltage

RBE= 100Ω

65

VCEO

Collector-Emitter Voltage

55

VEBO

Emitter-Base Voltage

5

IC

Collector Current-Continuous

7

IBB

Base Current

3

Collector Power Dissipation

PC

@ Ta=25℃

Collector Power Dissipation

@ TC=25℃

1.8

50

TJ

Junction Temperature

150

Tstg

Storage Temperature Range

-65~150

UNIT

V

V

V

V

V

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2.5 ℃/W

70 ℃/W

isc Website：www.iscsemi.cn

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