2N5656 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
2N5656 Datasheet PDF : 4 Pages
| |||
2N5655 2N5657
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage
(IC = 100 mAdc (inductive), L = 50 mH)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 mAdc, IB = 0)
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 150 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 250 Vdc, IB = 0)
2N5655 VCEO(sus)
250
2N5657
350
2N5655 V(BR)CEO
250
2N5657
350
ICEO
2N5655
–
2N5657
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 250 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
ICEX
2N5655
–
2N5657
–
2N5655
–
2N5657
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 275 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 375 Vdc, IE = 0)
ICBO
2N5655
–
2N5657
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
ON CHARACTERISTICS
IEBO
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 50 mAdc, VCE = 10 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 500 mAdc, VCE = 10 Vdc)
hFE
25
30
15
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 500 mAdc, IB = 100 mAdc)
VCE(sat)
–
–
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Voltage (1) (IC = 100 mAdc, VCE = 10 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
VBE
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current–Gain – Bandwidth Product (2) (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz)
fT
10
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small–Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data for 2N5655 Series.
hfe
20
Max
Unit
–
Vdc
–
–
Vdc
–
mAdc
0.1
0.1
mAdc
0.1
0.1
1.0
1.0
µAdc
10
10
10
µAdc
–
–
250
–
–
Vdc
1.0
2.5
10
1.0
Vdc
–
MHz
25
pF
–
–
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
(2) fT is defined as the frequency at which |hfe| extrapolates to unity.
1.0
10
0.5
µs
TJ = 150°C
0.2
500
µs
1.0 ms
d
0.1
c
Second Breakdown Limit
Thermal Limit @ TC = 25°C
0.05
Bonding Wire Limit
0.02 Curves apply below rated VCEO 2N5655
0.01
20
2N5657
30 40 60
100
200 300 400 600
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
http://onsemi.com
2
Share Link: 