2N5684(2001) 데이터 시트보기 (PDF) - ON Semiconductor
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2N5684 Datasheet PDF : 8 Pages
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1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03
0.01
0.02 SINGLE PULSE
0.01
0.02
0.05 0.1 0.2
2N5684 2N5686
θJC(t) = r(t) θJC
P(pk)
θJC = 0.584°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
Figure 4. Thermal Response
50 100 200
500 1000 2000
100
500 µs
100 µs
50
20
dc
5.0 ms 1.0 ms
10
TJ = 200°C
5.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
2.0
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
1.0
CURVES APPLY BELOW
0.5
RATED VCEO
0.2
0.1
1.0
2N5684, 2N5686
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
4.0
3.0
2N5684 (PNP)
2N5686 (NPN)
2.0
ts
1.0
0.8
0.6
0.4
tf
0.3
TJ = 25°C
IB1 = IB2
IC/IB = 10
VCE = 30 V
0.2
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
5000
TJ = 25°C
3000
2000
Cib
1000
Cib
Cob
700
500
0.1 0.2
2N5684 (PNP)
Cob
2N5686 (NPN)
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
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