VSC8161 데이터 시트보기 (PDF) - Vitesse Semiconductor

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VSC8161

2.488Gb/s SONET / SDH 16:1 Mux with Clock Generator and Laser Driver

Vitesse Semiconductor 

VITESSE

SEMICONDUCTOR CORPORATION

2.488Gb/s SONET / SDH

16:1 Mux with Clock Generator and Laser Driver

Advance Product Information

VSC8161

Table 4: Laser Driver AC Electrical Specifications

Symbol

Parameter

tr, tf

Output Rise and Fall Times

Min Typ Max Units

Conditions

25 Ohm Load, 10%-90%

100

ps

15 mA < IMOD< 60 mA

IBIAS= 40 mA

Table 5: Laser Driver DC Electrical Specifications

Symbol

Parameter

Min

Typ

Max Units Conditions

IBIAS

Programmable Laser Bias Currenta

IMOD

Programmable Modulation Currentb

VIB

Laser Bias Control Voltage

50

mA

60

mA

VEE + 2.1

V

IBIAS = 50 mA

with 25Ω load

VIP

VOCM

Laser Modulation Control Voltage

Output Voltage Compliance

VCC -2.5V

VEE + 2.1

V

V

IMOD= 60 mA

VEE = -5.2V

a. IBIAS will be less than 2mA when (VIB - MIB) is less than 100mV.

b. IMOD will be less than 2mA when (VIP - MIP) is less than 100mV

Power Dissipation

Table 6: Power Supply Currents and Power Dissipation

Parameter

Description

Typ

IEE

Power supply current from VEE, max laser driver current

380

ITT

Power supply current from VTT, max laser driver current

210

PD

Power dissipation, max laser driver current

2.5

PD

Power dissipation, min laser driver current

2.0

Note: Over recommended operating conditions, VCC = GND, outputs open-circuit)

Max

600

300

3.9

3.3

Units

mA

mA

W

W

Page 8

© VITESSE SEMICONDUCTOR CORPORATION

741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896

G52208-0, Rev.2.1

8/28/98

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