2N5664 데이터 시트보기 (PDF) - Inchange Semiconductor
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2N5664 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5664 2N5665
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2N5664
2N5665
IC=10mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10μA ; IC=0
VCEsat-1
VCEsat-2
Collector-emitter
saturation voltage
2N5664
2N5665
IC=3A; IB=0.3A
IC=3A; IB=0.6A
Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat-1
Base-emitter saturation 2N5664
voltage
2N5665
IC=3A; IB=0.3A
IC=3A; IB=0.6A
VBEsat-2 Base-emitter saturation voltage
IC=5A; IB=1A
2N5664 VCE=200V;VBE(off)=1.5V
ICES
Collector cut-off current
2N5665 VCE=300V;VBE(off)=1.5V
2N5664 VCB=250V; IE=0
ICBO
Collector cut-off current
2N5665 VCB=400V; IE=0
hFE-1
DC current gain
2N5664
2N5665
IC=0.5A ; VCE=2V
hFE-2
DC current gain
2N5664
2N5665
IC=1A ; VCE=5V
hFE-3
DC current gain
2N5664
2N5665
IC=3A ; VCE=5V
hFE-4
DC current gain
IC=5A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
ton
Turn-on time
toff
Turn-off time
2N5664
2N5665
VCC=30V;IC=1A;IB1=-IB2=30mA
VCC=30V;IC=1A;IB1=-IB2=50mA
MIN TYP. MAX UNIT
200
V
300
6
V
0.4
V
1.0
V
1.2
V
1.5
V
0.2 mA
1.0 mA
40
25
40
120
25
75
15
10
5
120 pF
0.25 μs
1.5
μs
2.0
2
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