2N5614 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2N5614

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5614

2N5616/5618 IC=50mA ;IB=0

2N5620

VCEsat Collector-emitter saturation voltage

IC=1A; IB=0.1A

VBE

Base-emitter on voltage

IC=2.5A ; VCE=5V

ICBO

Collector cut-off current

VCB=Rated VCBO; IE=0

ICEO

Collector cut-off current

VCE= Rated VCEO,IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

2N5614/5618

2N5616/5620

IC=2.5A ; VCE=5V

2N5614/5618

fT

Transition frequency

IC=0.5A ; VCE=10V

2N5616/5620

MIN TYP. MAX UNIT

60

80

V

100

0.5

V

1.5

V

0.1

mA

1.0

mA

0.1

mA

70

200

30

90

70

MHz

60

2

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