2N5609 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2N5609

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

www.jmnic.com

Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter

sustaining voltage

2N5605

2N5607/5609 IC=50mA ;IB=0

2N5611

VCEsat Collector-emitter saturation voltage

IC=1A; IB=0.1A

VBE

Base-emitter on voltage

IC=2.5A ; VCE=5V

ICBO

Collector cut-off current

VCB=Rated VCBO; IE=0

ICEO

Collector cut-off current

VCE= Rated VCEO,IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

2N5605/5609

2N5607/5611

IC=2.5A ; VCE=5V

2N5605/5609

fT

Transition frequency

IC=0.5A ; VCE=10V

2N5607/5611

MIN TYP. MAX UNIT

60

80

V

100

0.5

V

1.5

V

0.1 mA

1.0 mA

0.1 mA

70

200

30

90

70

MHz

60

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