2N60-TN3-R 데이터 시트보기 (PDF) - Unisonic Technologies
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2N60-TN3-R Datasheet PDF : 8 Pages
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2N60
TYPICAL CHARACTERISTICS
On-Region Characteristics
100
V GS
Top: 15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :
5.5V
10-1
10-2
10-1
250μs Pulse Test
TC=25℃
100
101
Drain-Source Voltage, VDS (V)
On-Resistance Variation vs. Drain Current and
Gate Voltage
12
TJ=25℃
10
8
VGS=10V
VGS=20V
6
4
2
0
0
1
2
3
4
5
6
Drain Current, ID (A)
Capacitance vs. Drain-Source Voltage
500
400
300
200
Ciss=CGS+CGD
(CDS=shorted)
Coss=CDS+CGD
Ciss
Crss=CGD
Coss
Crss
100
VGS=0V
f = 1MHz
0
10-1
100
101
Drain-Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
Transfer Characteristics
VDS=50V
250μs Pulse Test
85℃
100
25℃
-20℃
10-1
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Body Diode Forward Voltage Variationvs.
Source Current and Temperature
VGS=0V
250μs Pulse Test
100
125℃
25℃
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Gate Charge vs. Gate Charge Voltage
12
VDS=120V
10
VDS=300V
VDS=480V
8
6
4
2
ID=2.4A
0
0
2
4
6
8
1
0
Total Gate Charge, QG (nC)
6 of 8
QW-R502-053,E
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