2N5972 데이터 시트보기 (PDF) - Inchange Semiconductor

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2N5972

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2N5972

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0

VCEsat-1 Collector-emitter saturation voltge

IC=7A ;IB=0.7A

VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3.75A

VBEsat Base-emitter saturation voltage

ICEO

Collector cut-off current

ICEV

Collector cut-off current

ICBO

Collector cut-off current

IC=15A; IB=3.75A

VCE=40V; IB=0

VCE=100V; VBE(off)=1.5V

TC=150℃

VCB=100V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=5A ; VCE=1.5V

hFE-2

fT

DC current gain

Transition frequency

IC=15A ; VCE=4V

IC=1A;VCE=10V

MIN TYP. MAX UNIT

80

V

1.0

V

4.0

V

2.5

V

1.0

mA

0.5

5.0

mA

0.5

mA

1.0

mA

25

75

4

4

MHz

2

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