2N6077 데이터 시트보기 (PDF) - Inchange Semiconductor
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2N6077 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6077 2N6078 2N6079
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·High breakdown voltage
APPLICATIONS
·For horizontal deflection output stages
of TV’s and CRT’s
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N6077
VCBO
Collector-base voltage 2N6078
2N6079
2N6077
VCEO
Collector-emitter voltage 2N6078
2N6079
VEBO
IC
PD
Emitter-base voltage
Collector current
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
300
275
375
275
250
350
6
7
45
150
-65~200
UNIT
V
V
V
A
W
℃
℃
VALUE
4.28
UNIT
℃/W
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