2N6077 데이터 시트보기 (PDF) - Inchange Semiconductor

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2N6077

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2N6077 2N6078 2N6079

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N6077

275

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6078 IC=0.1A ;IB=0

250

V

2N6079

350

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

1.0

V

VBEsat Base-emitter saturation voltage

IC=5A; IB=0.5A

1.2

V

ICEO

Collector cut-off current

ICEX

Collector cut-off current

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

VCE= Rated VCEO; IB=0

VCE=Rated VCEO; VBE(off)=1.5V

TC=125℃

VCB=Rated VCBO; IE=0

VEB=6V; IC=0

2.0 mA

0.1

1.0

mA

0.1 mA

1.0 mA

hFE

DC current gain

IC=1.2A ; VCE=1V

12

70

fT

Transition frequency

IC=0.5A;VCE=10V;f=1MHz

7

MHz

2

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