2N6259 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2N6259

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon NPN Power Transistors

www.jmnic.com

2N6259

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0

VCEsat-1 Collector-emitter saturation voltge

IC=8A ;IB=0.8A

VCEsat-2 Collector-emitter saturation voltge

IC=16A ;IB=3.2A

VBE

Base-emitter on voltage

ICEO

Collector cut-off current

ICEX

Collector cut-off current

IC=8A ; VCE=2V

VCE=130V; IB=0

VCE=150V; VBE(off)=1.5V

ICBO

Emitter cut-off current

VCB=150V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE-1

DC current gain

IC=8A ; VCE=2V

hFE-2

DC current gain

IC=16A ; VCE=4V

MIN TYP. MAX UNIT

150

V

1.5

V

2.5

V

2.0

V

10

mA

2.0

mA

2.0

mA

5.0

mA

15

60

10

JMnic

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