2N6576 데이터 시트보기 (PDF) - SavantIC Semiconductor
부품명
상세내역
제조사
2N6576 Datasheet PDF : 3 Pages
| |||
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6576 2N6577 2N6578
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6576
2N6577 IC=0.2A ;IB=0
2N6578
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=100mA
VCEsat-2 Collector-emitter saturation voltage IC=15A ;IB=150mA
VBE sat-1 Base-emitter saturation voltage
IC=10A; IB=100mA
VBE sat-2 Base-emitter saturation voltage
IC=15A ;IB=150mA
2N6576 VCE=60V; IB=0
ICEO
Collector cut-off current 2N6577 VCE=90V; IB=0
2N6578 VCE=120V; IB=0
2N6576 VCB=60V; IE=0
ICBO
Collector cut-off current 2N6577 VCB=90V; IE=0
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
DC current gain
2N6578 VCB=120V; IE=0
VEB=7V; IC=0
IC=0.4A ; VCE=3V
IC=4A ; VCE=3V
hFE-3
hFE-4
VF
DC current gain
DC current gain
Diode forward voltage
IC=10A ; VCE=3V
IC=15A ; VCE=4V
IF=15A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MIN
TYP. MAX UNIT
60
90
V
120
2.8
V
4.0
V
3.5
V
4.5
V
1.0
mA
200
2000
500
100
0.5
mA
7.5
mA
20000
5000
4.5
A
VALUE
1.46
UNIT
/W
2
Share Link: 