2N6849 데이터 시트보기 (PDF) - Microsemi Corporation
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2N6849 Datasheet PDF : 4 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
VGS = -10V, ID = -6.5A
VDS = -50V
Symbol
Qg(on)
Qgs
Qgd
ID = -6.5A, VGS = -10Vdc,
Gate drive impedance = 7.5Ω,
VDD = -40Vdc
di/dt ≤ -100A/µs, VDD ≤ -50V,
IF = -6.5A
Symbol
td(on)
tr
td(off)
tf
trr
Min.
Min.
Max.
Unit
34.8
6.8
nC
23.1
Max.
Unit
60
140
ns
140
140
250
ns
T4-LDS-0009 Rev. 2 (091456)
Page 2 of 4
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