2PC4617J 데이터 시트보기 (PDF) - Philips Electronics

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2PC4617J

NPN general purpose transistor

Philips Electronics 

Philips Semiconductors

NPN general purpose transistor

Preliminary specification

2PC4617J

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient in free air; note 1

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

MAX.

500

UNIT

K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector cut-off current

IEBO

hFE

VCEsat

Cc

fT

emitter cut-off current

DC current gain

2PC4617JQ

2PC4617JR

2PC4617JS

collector-emitter saturation

voltage

collector capacitance

transition frequency

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

CONDITIONS

IE = 0; VCB = 30 V

IE = 0; VCB = 30 V; Tj = 150 °C

IC = 0; VEB = 4 V

IC = 1 mA; VCE = 6 V; note 1

IC = 50 mA; IB = 5 mA; note 1

MIN.

−

−

−

MAX.

100

5

100

UNIT

nA

µA

nA

120

270

180

390

270

560

−

200

mV

IE = ie = 0; VCB = 12 V; f = 1 MHz −

1.5

IC = 2 mA; VCE = 12 V; f = 100 MHz; 100

−

note 1

pF

MHz

1999 May 04

3

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