A933AS(2008) 데이터 시트보기 (PDF) - ROHM Semiconductor

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A933AS
(Rev.:2008)

General Purpose Transistor (−50V, −0.15A)

ROHM Semiconductor 

Transistors

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

2SA1037AK, 2SA1576A

2SA2029, 2SA1774

2SA933AS

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

−60

−50

−6

−0.15

0.2

0.15

0.3

150

−55 to +150

Unit

V

V

V

A (DC)

W

˚C

˚C

2SA1774EB

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −60

Collector-emitter breakdown voltage BVCEO −50

Emitter-base breakdown voltage

BVEBO −6

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

hFE

120

Transition frequency

fT

−

Output capacitance

Cob

−

Typ.

−

−

−

−

−

−

−

140

4.0

Max.

−

−

−

−0.1

−0.1

−0.5

560

−

5.0

Unit

V

V

V

µA

µA

V

−

MHz

pF

Conditions

IC= −50µA

IC= −1mA

IE= −50µA

VCB= −60V

VEB= −6V

IC/IB= −50mA/−5mA

VCE= −6V, IC= −1mA

VCE= −12V, IE=2mA, f=100MHz

VCB= −12V, IE=0A, f=1MHz

zPackaging specifications and hFE

Package

Code

Type

Basic ordering

hFE unit (pieces)

2SA2029 QRS

2SA1037AK QRS

2SA1576A QRS

2SA1774 QRS

2SA933AS QRS

T146

3000

−

−

−

−

T106

3000

−

−

−

−

Taping

TL

T2L

3000

8000

−

−

−

−

−

−

−

−

TP

5000

−

−

−

−

hFE values are classified as follows:

Item

Q

R

S

hFE

120 to 270 180 to 390 270 to 560

Rev.A

2/3

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