2SA1021 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA1021

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-10μA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10μA ; IC=0

VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA

VBEsat Base-emitter saturation voltage

IC=-500mA; IB=-50mA

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-150mA ; VCE=-5V

fT

Transition frequency

IC=-50mA ; VCE=-10V

Product Specification

2SA1021

MIN TYP. MAX UNIT

-150

V

-150

V

-6

V

-0.5

V

-1.2

V

-1.0 μA

-1.0 μA

60

320

15

MHz

2

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