2SA1201 데이터 시트보기 (PDF) - Transys Electronics Limited

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2SA1201

SOT-89 Plastic-Encapsulated PNP Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

SOT-89 Plastic-Encapsulated Transistors

2SA1201 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 500 mW (Tamb=25℃)

Collector current

ICM : -800 mA

Collector-base voltage

V(BR)CBO : -120 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

VCE(sat)

VBE

fT

Cob

Test conditions

Ic=-1mA, IE=0

Ic=-10mA, IB=0

IE=-1mA, IC=0

VCB=-120V, IE=0

VEB=-5V, IC=0

VCE=-5V, IC=-100mA

IC=-500mA, IB=-50mA

VCE=-5V, IC=-500mA

VCE=-5V, IC=-100mA

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-120

V

-120

V

-5

V

-0.1 µA

-0.1 µA

80

240

-1

V

-1

V

120

MHz

30

pF

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

O

80-160

DO

Y

120-240

DY

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