2SA1078 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SA1078 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1078
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞
-120
V
V(BR)CBO Collector-base breakdown voltage
IC=-1μA ,IE=0
-120
V
V(BR)EBO Emitter-base breakdown voltage
IE=-1μA ,IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-0.7A; IB=-70mA
-0.45 -1.0
V
VBE
Base-emitter on voltage
IC=-0.7A ; VCE=-5V
-0.8 -1.7
V
ICBO
Collector cut-off current
ICEO
Collector cut-off current
VCB=-120V; IE=0
VCE=-120V; IB=0
-1
μA
-100 μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
μA
hFE-1
DC current gain
IC=-0.3A ; VCE=-5V
60
350
hFE-2
DC current gain
IC=-0.7A ; VCE=-5V
50
fT
Transition frequency
IC=-0.5A ; VCE=-10V;f=10MHz
140
MHz
COB
Output capacitance
IE=0 ; VCB=-20V;f=1MHz
100
pF
2
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