2SA1135 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SA1135 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VEB=-6V; IC=0
IC=-1A ; VCE=-4V
IE=0.2A ; VCE=-10V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
IC=-2A ; VCC=-6V
IB1=-IB2=-0.3A;RL=3Ω
Product Specification
2SA1135
MIN TYP. MAX UNIT
-80
V
-1.0
V
-1.0 mA
-1.0 mA
40
10
MHz
1.0
μs
0.4
μs
0.15
μs
2
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