2SA1184 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SA1184

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10μA; IC=0

VCEsat Collector-emitter saturation voltage IC=-500mA; IB=B -50mA

VBE

Base-emitter on voltage

IC=-500mA ; VCE=-5V

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-100mA ; VCE=-5V

fT

Transition frequency

IC=-0.1A ; VCE=5V

Product Specification

2SA1184

MIN TYP. MAX UNIT

-120

V

-5

V

-1.0

V

-1.0

V

-1

μA

-1

μA

80

240

120

MHz

2

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