2SA1077 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SA1077 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SA1077
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=-50μA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50μA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-120V; IE=0
ICEO
Collector cut-off current
VCE=-120V; IB=0
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-10V;f=10MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
IC=-7.5A; RL=4Ω
IB1=-IB2=-0.75A;
MIN TYP. MAX UNIT
-120
V
-120
V
-7
V
-0.9 -1.8
V
-1.25 -1.7
V
-50
μA
-1
mA
-50
μA
60
200
40
30
60
MHz
300 470
pF
0.15
μs
0.5
μs
0.11
μs
2
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