JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=-140V; IE=0
VEB=-6V; IC=0
IC=-5A ; VCE=4V
fT
Transition frequency
IE=1A ; VCE=-12V
Product Specification
2SA1106
MIN TYP. MAX UNIT
-140
V
-1.5
V
-1.8
V
-100 μA
-100 μA
50
180
20
MHz
2