2SA1120 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA1120

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.1A

VBE

Base-emitter on voltage

IC=-4A ; VCE=-2V

ICBO

Collector cut-off current

VCB=-35V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE-1

DC current gain

IC=-500mA ; VCE=-2V

hFE-2

DC current gain

IC=-4A ; VCE=-2V

Cob

Output capacitance

IE=0 ; VCB=-10V f=1MHz

fT

Transition frequency

IC=-500mA ; VCE=-2V

Product Specification

2SA1120

MIN TYP. MAX UNIT

-35

V

-1.0

V

-1.5

V

-0.1 mA

-0.1 mA

200

70

62

pF

170

MHz

2

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