2SA1125T 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
부품명
상세내역
제조사
2SA1125T Datasheet PDF : 3 Pages
| |||
JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-0.1mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10μA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-30mA; IB=-3mA
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-10mA ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-10mA ; VCE=-10V
hFE Classifications
Q
R
S
T
90-155 130-220 185-330 260-450
Product Specification
2SA1125
MIN TYP. MAX UNIT
-150
V
-5
V
-1.0
V
-1
μA
-1
μA
90
450
5
pF
200
MHz
2
Share Link: 