2SC3135 데이터 시트보기 (PDF) - SANYO -> Panasonic

부품명

상세내역

제조사

2SC3135

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Ordering number:EN1049D

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1253/2SC3135

High-hFE, AF Amp Applications

Features

· High VEBO.

· Wide ASO and high durability against breakdown.

Package Dimensions

unit:mm

2033

[2SA1253/2SC3135]

( ) : 2SA1253

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

VCBO

VCEO

VEBO

IC

ICP

PC

Tj

Tstg

Electrical Characteristics at Ta = 25˚C

Conditions

Parameter

Symbol

Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Common Base Output Capacitance

ICBO

IEBO

hFE

fT

Cob

VCB=(–)40V, IE=0

VEB=(–)10V, IC=0

VCE=(–)6V, IC=(–)1mA

VCE=(–)6V, IC=(–)1mA

VCB=(–)6V, f=1MHz

Collector-to-Emitter Saturation Voltage

VCE(sat) IC=(–)50mA, IB=(–)5mA

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

* : The 2SA1253/2SC3135 are classified by 1mA hFE as follows :

100 R 200 140 S 280 200 T 400 280 U 560

B : Base

C : Collector

E : Emitter

SANYO : SPA

Ratings

Unit

(–)60 V

(–)50 V

(–)15 V

(–)200 mA

(–)400 mA

250 mW

150 ˚C

–55 to +150 ˚C

Ratings

min

typ

100*

(–)60

(–)50

(–)15

100

(3.8)

2.5

(–0.2)

0.15

max

(–)0.1

(–)0.1

560*

(–)0.5

Unit

µA

µA

MHz

pF

V

V

V

V

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/3097KI/3135KI/D282KI (KOTO) No.1049-1/4

Share Link: