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A1232 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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A1232
Silicon PNP Power Transistors
Quanzhou Jinmei Electronic
A1232 Datasheet PDF : 3 Pages
1
2
3
JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
CEsat
Collector-emitter saturation voltage I
C
=-5A; I
B
=-0.5A
V
BEsat
Base-emitter saturation voltage
I
C
=-5A; I
B
=-0.5A
I
CBO
Collector cut-off current
V
CB
=-130V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=-3V; I
C
=0
h
FE-1
DC current gain
I
C
=-2A ; V
CE
=-5V
h
FE-2
DC current gain
I
C
=-5A ; V
CE
=-5V
C
ob
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
f
T
Transition frequency
I
C
=-1A ; V
CE
=-5V
h
FE-1
Classifications
R
Q
P
60-120 100-200 160-320
Product Specification
2SA1232
MIN TYP. MAX UNIT
-0.6 -1.5
V
-1.3 -2.0
V
-50
μ
A
-50
μ
A
60
320
40
250
pF
60
MHz
2
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