2SA1261 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SA1261 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SA1261
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-5A ;IB1=-0.5A;L=1mH
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB=-100V; IE=0
VCE=-100V; VBE=-1.5V
Ta=125℃
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
hFE-2
DC current gain
IC=-3A ; VCE=-5V
hFE-3
DC current gain
IC=-5A ; VCE=-5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;IB1=-IB2=-0.5A ,
RL=10Ω;VCC=-50V
hFE-2 classifications
M
L
K
40-80
60-120 100-200
MIN TYP. MAX UNIT
-100
V
-0.6
V
-1.5
V
-0.01 mA
-0.01
-1.0
mA
-0.01 mA
40
200
40
200
20
0.5
μs
1.5
μs
0.5
μs
2
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