2SA1301-O 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA1301-O

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A

VBE

Base-emitter voltage

IC=-6A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-160V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-6A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

COB

Collector output capacitance

f=1MHz;VCB=-10V

‹ hFE-1 classifications

R

O

55-110

80-160

Product Specification

2SA1301

MIN TYP. MAX UNIT

-160

V

-0.9 -2.5

V

-1.0 -1.5

V

-5

μA

-5

μA

55

160

35

30

MHz

480

pF

2

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