2SA1532(2003) 데이터 시트보기 (PDF) - Panasonic Corporation
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2SA1532 Datasheet PDF : 3 Pages
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Transistors
2SA1532
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930
■ Features
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−30
V
Collector-emitter voltage (Base open) VCEO
−20
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Marking Symbol: E
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Base-emitter saturation voltage
VBE VCE = −10 µA, IC = −1 mA
Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
Forward current transfer ratio *
hFE VCB = −10 V, IE = 1 mA
50
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = −1 mA
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz 150
Noise figure
NF VCB = −10 V, IE = 1 mA, f = 5 MHz
Reverse transfer impedance
Zrb VCB = −10 V, IE = 1 mA, f = 2 MHz
Common-emitter reverse transfer capacitance Cre VCB = −10 V, IE = 1 mA, f = 10.7 MHz
− 0.7
− 0.1
300
2.8
22
1.2
− 0.1
−100
−10
220
4.0
60
2.0
V
µA
µA
µA
V
MHz
dB
Ω
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
A
B
C
hFE
50 to 100
70 to 140 110 to 220
Publication date: January 2003
SJC00021BED
1
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