2SA1627 데이터 시트보기 (PDF) - Unisonic Technologies

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2SA1627

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC2SA1627 PNPEPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON

TRANSISTOR

DESCRIPTION

The UTC 2SA1627 is designed for general purpose

amplifier and high speed switching applications.

FEATURES

*High voltage

*Low collector saturation voltage.

*High-speed switching

1

TO-126

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )

PARAMETER

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Power Dissipation

PC

Collector Current(DC)

Collector Current(PULSE)

Ic

Icp *1

Junction Temperature

Tj

Storage Temperature

*1 : PW≦10ms,Duty Cycle≦50%

TSTG

VALUE

-600

-600

-7.0

1.0

-1.0

-2.0

150

-55 to +150

UNIT

V

V

V

W

A

A

°C

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector Cut-Off Current

ICBO

VCB= -600V,IE=0

Emitter Cut-Off Current

IEBO VEB= -7.0V,Ic=0

DC Current Gain

hFE1*2 VCE= -5.0V,Ic= -0.1A

30

DC Current Gain

hFE2*2 VCE= -5.0V,Ic= -0.5A

5

Collector-Emitter Saturation Voltage

VCE(sat)*2 Ic= -0.3A,IB= -0.06A

Base-Emitter Saturation Voltage

VBE(sat)*2 Ic= -0.3A,IB= -0.06A

Gain Bandwidth Product

fT

VCE= -10V, IE=0.1A

10

TYP

58

19

-0.28

-0.85

28

MAX

-10

-10

120

-0.5

-1.2

UNIT

µA

µA

V

V

MHz

UTC UNISONIC TECHNOLOGIES CO. LTD 1

QW-R204-010,B

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