2SA1832 데이터 시트보기 (PDF) - Sensitron
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2SA1832 Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832
2SA1832
Audio Frequency General Purpose Amplifier Applications
Unit: mm
· High voltage and high current: VCEO = −50 V, IC = −150 mA (max)
· Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)
= 0.95 (typ.)
· High hFE: hFE = 70~400
· Complementary to 2SC4738
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
-50
V
-50
V
-5
V
-150
mA
-30
mA
100
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCB = -50 V, IE = 0
IEBO
VEB = -5 V, IC = 0
hFE
(Note)
VCE = -6 V, IC = -2 mA
VCE (sat)
fT
Cob
IC = -100 mA, IB = -10 mA
VCE = -10 V, IC = -1 mA
VCB = -10 V, IE = 0, f = 1 MHz
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Min Typ. Max Unit
¾
¾ -0.1 mA
¾
¾ -0.1 mA
70
¾
400
¾ -0.1 -0.3
V
80
¾
¾ MHz
¾
4
7
pF
Marking
1
2003-03-27
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