2SA1726 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SA1726 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=∞
VCE(sat) Collector-emitter saturation voltage IC=-2A; IB=-0.2A
ICBO
Collector cut-off current
VCB=-80V ;IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-2A ; VCE=-4V
COB
Collertor output capacitance
f=1MHz; VCB=-10V
fT
Transition frequency
IE=0.5A ; VCE=-12V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=-30V; IC=-3A
IB1=-IB2=-0.3A
RL=10Ω
hFE Classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1726
MIN TYP. MAX UNIT
-80
V
-0.5
V
-10 μA
-10 μA
50
150
pF
20
MHz
0.18
μs
1.10
μs
0.21
μs
2
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