A2026 데이터 시트보기 (PDF) - Isahaya Electronics
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A2026 Datasheet PDF : 2 Pages
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DESCRIPTION
2SA2026 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.5V max
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
2SA2026
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
2.5
0.5
1.5 0.5
Unit：ｍｍ
①
②
③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA：SC-59
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
-300
V
VCEO Collector to Emitter voltage
-300
V
VEBO
Emitter to Base voltage
-7
V
IO
Collector current
-100
mA
Pc
Collector dissipation
150
mW
Tj
Junction temperature
＋125
℃
Tstg
Storage temperature
-55〜＋125 ℃
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to B break down voltage
E to Bbreak down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CBO
V(BR) EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
I C=-50μA ,I E=0
I E=-50μA ,I C=0
I C=-1mA ,R BE=∞
V CB=--300V, I E=0mA
V EB=-5V, I C=0mA
V CE=-10V, I C=-10mA
I C=-100mA ,IB=-10mA
V CE=-6V, I E=10mA
V CB=-6V, I E=0,f=1MHz
Limits
Unit
Min Typ Max
-300 -
-
V
-7
-
-
V
-300 -
-
V
-
-
-0.5 μA
-
-
-0.5 μA
50
-
305
-
-
-0.5
V
-
40
-
MHz
-
3.5
-
pF
ISAHAYA ELECTRONICS CORPORATION
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