2SA1860 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SA1860 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1860
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A
ICBO
Collector Cutoff Current
VCB= -150V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
IC= -5A ; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= 2A ; VCE= -12V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= -5A; IB1= -IB2= -0.5A;
VCC= -60V; RL= 12Ω
MIN TYP. MAX UNIT
-150
V
-2.0 V
-100 μA
-100 μA
50
400
pF
50
MHz
0.25
μs
0.85
μs
0.2
μs
hFE Classifications
O
P
Y
50-100 70-140 90-180
isc Website：www.iscsemi.cn
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