A1887 데이터 시트보기 (PDF) - Inchange Semiconductor

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A1887

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.25A

VBEsat Base-emitter saturation voltage

IC=-5A ;IB=-0.25A

ICBO

Collector cut-off current

VCB=-70V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-1V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-1A ; VCE=-1V

Product Specification

2SA1887

MIN TYP. MAX UNIT

-50

V

-0.2 -0.4

V

-0.95 -1.4

V

-1.0 μA

-1.0 μA

120

400

215

pF

45

MHz

2

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