A1869 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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A1869 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A
VBE
Base-emitter voltage
IC=-0.5A ; VCE=-2V
ICBO
Collector cut-off current
VCB=-50V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-2V
hFE-1 Classifications
O
Y
70-140
120-240
Product Specification
2SA1869
MIN TYP. MAX UNIT
-50
V
-0.3 -0.6
V
-0.8 -1.0
V
-1.0 μA
-1.0 μA
70
240
30
35
pF
100
MHz
2
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