A1979S 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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A1979S Datasheet PDF : 4 Pages
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2SA1979S
PNP Silicon Transistor
MEDIUM POWER AMPLIFIER
Features
PIN Connection
• Large collector current : ICMax=-500mA
• Suitable for low-Voltage operation because of
its low saturation voltage
C
• Complementary pair with 2SC5342S
Ordering Information
B
Type No.
Marking
Package Code
E
2SA1979S
AA □ □
①② ③
SOT-23
B
C
E
SOT-23
①Device Code ②hFE Rank ③Year&Week Code
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-40
-32
-5
-500
350
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
* : hFE rank / O : 70~140, Y : 120~240
Symbol
BVCEO
ICBO
IEBO
hFE*
VCE(sat)
fT
Cob
Test Condition
IC=-1mA, IB=0
VCB=-40V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-20mA
VCB=-6V, IE=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
-32
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
70
-
240
-
-
- -0.25 V
-
200
-
MHz
-
7.5
-
pF
KSD-T5C019-002
1
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