2SA1908 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SA1908 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc-25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB=-120V;IE=0
IEBO
Emitter Cutoff Current
HFE
DC Current Gain
VEB= -6V; lc= 0
lc= -3A; VCE= -4V
COB
Collector Output Capacitance
lE=0;VCB=-10V;f=1MHz
fi
Current-Gain—Bandwidth Product
IE=0.5A;VCE=-12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=-4A, RL=10fi,
IB1= -lB2= -0.4A, Vcc= -40V
classifications
o
P
Y
50-100 70-140 90-180
2SA1908
MIN TYP. MAX UNIT
-120
V
-0.5 V
-10 u A
-10 u A
50
300
pF
20
MHz
0.14
us
1.40
us
0.21
us
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