2SA747A 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SA747A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-5A; IB=-0.5A
VCB=-140V; IE=0
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
VCC=-12V;RL=4Ω;IC=-3A
IB1=-200mA,IB2=50mA
Product Specification
2SA747A
MIN TYP. MAX UNIT
-140
V
-6
V
-2.0
V
-2.5
V
-0.1 mA
-1.0 mA
30
15
MHz
1.2
μs
3.3
μs
0.8
μs
2
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