A740 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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A740

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA

VBE

Base-emitter on voltage

IC=-500mA ; VCE=-10V

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-500mA ; VCE=-10V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-500mA ; VCE=-10V

Product Specification

2SA740

MIN TYP. MAX UNIT

-150

V

-1.5

V

-1.0

V

-20 μA

-10 μA

40

140

90

pF

8

MHz

2

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