2SA985 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SA985

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SA985

2SA985A

IC=-25mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A

VBEsat Base-emitter saturation voltage

IC=-1A; IB=-0.1A

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-5mA ; VCE=-5V

hFE-2

DC current gain

IC=-0.3A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V,f=1MHz

fT

Transition frequency

IC=-0.2A ; VCE=-5V

‹ hFE-2 Classifications

R

Q

P

60-120 100-200 160-320

Product Specification

2SA985 2SA985A

MIN TYP. MAX UNIT

-120

V

-150

-0.3 -2.0

V

-0.9 -1.5

V

-1.0 μA

-1.0 μA

35

60

150 320

29

pF

180

MHz

2

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