A887 데이터 시트보기 (PDF) - SavantIC Semiconductor
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A887 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA887
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A
VBEsat
Base-emitter saturation voltage
hFE-1
DC current gain
hFE-2
DC current gain
ICBO
Collector cut-off current
IC=-2A ;IB=-0.2 A
IC=-100mA ; VCE=-5V
IC=-1A ; VCE=-5V
VCB=-40V; IE=0
ICEO
Collector cut-off current
VCE=-20V; IB=0
IEBO
Emitter cut-off current
fT
Transition frequency
VEB=-5V; IC=0
IE=0.5A ; VCB=-5V
MIN TYP. MAX UNIT
-50
V
-70
V
-0.6 -1.2
V
-1.0 -1.5
V
30
50
220
-1.0
µA
-100 µA
-10
µA
150
MHz
hFE-2 Classifications
P
Q
R
50-100 80-160 120-220
2
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