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2SA882 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA882
JMNIC
Quanzhou Jinmei Electronic JMNIC
2SA882 Datasheet PDF : 3 Pages
1 2 3
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-1.5A
VBE
Base-emitter on voltage
IC=-3A ; VCE=-4V
ICBO
Collector cut-off current
VCE=-130V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-3A ; VCE=-4V
www.jmnic.com
2SA882
MIN TYP. MAX UNIT
-130
V
-1.0
V
-3.0
V
-1.6
V
-0.1 mA
-0.1 mA
40
20
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