2SA971 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA971

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-5A ; VCE=-4V

COB

Collector output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-10V

Product Specification

2SA971

MIN TYP. MAX UNIT

-150

V

-150

V

-6

V

-3.0

V

-0.1 mA

-0.1 mA

30

270

pF

10

MHz

2

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