B1018A 데이터 시트보기 (PDF) - Inchange Semiconductor

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B1018A

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1018A

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= -0.5V(Max)@IC= -4A

·High Current Capability- IC= -7A

·Complement to Type 2SD1411A

APPLICATIONS

·High current switching applications.

·Power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

VCBO

VCEO

VEBO

www.iscsemi.cn PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE UNIT

-100

V

-80

V

-5

V

IC

Collector Current-Continuous

-7

A

IBB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-1

A

2

W

30

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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