B1018A 데이터 시트보기 (PDF) - Inchange Semiconductor

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B1018A

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1018A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0

-80

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.4A

-0.5 V

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC= -4A; IB=B -0.4A

VCB= -100V; IE= 0

-1.4 V

-5 μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-5 μA

hFE-1

hFE-2

COB

fT

www.iscsemi.cn DC Current Gain

IC= -1A; VCE= -1V

70

DC Current Gain

IC= -4A; VCE= -1V

30

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

Current-Gain—Bandwidth Product

IC= -1A; VCE= -4V

250

10

240

pF

MHz

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -3.0A ,IB1= -IB2= -0.3A,

VCC= -30V; RL= 10Ω

0.4

μs

2.5

μs

0.5

μs

‹ hFE-1 Classifications

O

Y

70-140 120-240

isc Website：www.iscsemi.cn

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