2SB1057R 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SB1057R

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1057

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-0.7A

VBE

Base-emitter on voltage

IC=-7A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-20mA ; VCE=-5V

hFE -2

DC current gain

IC=-1A ; VCE=-5V

hFE -3

DC current gain

IC=-7A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-10V

MIN TYP. MAX UNIT

-2.0

V

-1.8

V

-50

µA

-50

µA

20

40

200

20

450

pF

20

MHz

hFE-2 classifications

R

Q

P

40-80

60-120 100-200

2

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