B1102 데이터 시트보기 (PDF) - SavantIC Semiconductor

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B1102

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA ,IC=0

VCEsat -1 Collector-emitter saturation voltage IC=-2A; IB=-4mA

VCEsat -2 Collector-emitter saturation voltage IC=-4A; IB=-40mA

VBEsat-1 Base-emitter saturation voltage

IC=-2A; IB=-4mA

VBEsat-2 Base-emitter saturation voltage

IC=-4A; IB=-40mA

ICBO

Collector cut-off current

VCB=-60V; IE=0

ICEO

Collecto cut-off current

VCE=-50V; IB=0

hFE

DC current gain

IC=-2A ; VCE=-3V

VD

Diode forward voltage

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

ID=4A;

IC=-2A IB1=-IB2=-4mA

Product Specification

2SB1102

MIN TYP. MAX UNIT

-80

V

-7

V

-1.5

V

-3.0

V

-2.0

V

-3.5

V

-100 µA

-10

µA

1000

20000

3.0

V

0.8

µs

4.0

µs

1.0

µs

2

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